Application of phase shift masking to sub-0.13 micron lithography

Application of phase shift masking to sub-0.13 micron lithography

The main contribution of this thesis is to investigate the application of PSM, combined with other forms of RET, such as OAI and OPC, to poly gate patterning.

Bibliografski detalji
Glavni autor: Koo, Chee Kiong.
Daljnji autori: Yuan, Larry X.-C.
Format: Disertacija
Izdano: 2008
Teme:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online pristup:http://hdl.handle.net/10356/4521

Internet

http://hdl.handle.net/10356/4521

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