0.13-micron CMOS device characterization

This project emphasizes more on the transistor electrical characterization aspect as the input Front End of Line parameters are varied. This report covers the characterization of a fully working 0.13 um device with three layer metal copper Dual Damascene backend process.

Bibliographic Details
Main Author: Lazuardi, Stephen
Other Authors: Krishnamachar Prasad
Format: Thesis
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/4564