Studying the self-heating effect in silicon-on-insulator transistors
Self-heating effect is an important issue for SOI CMOS. This is because there is a buried oxide layer under the channel region. So, this layer will act as barrier to heat flow as the thermal conductivity of the SiO2 is larger than of Si.Hence, a channel temperature extraction technique by in-situ is...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2011
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| Online Access: | http://hdl.handle.net/10356/45717 |