Studying the self-heating effect in silicon-on-insulator transistors
Self-heating effect is an important issue for SOI CMOS. This is because there is a buried oxide layer under the channel region. So, this layer will act as barrier to heat flow as the thermal conductivity of the SiO2 is larger than of Si.Hence, a channel temperature extraction technique by in-situ is...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2011
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| Online Access: | http://hdl.handle.net/10356/45717 |
| _version_ | 1826121253733269504 |
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| author | Lee, Kah Wai. |
| author2 | Ang Diing Shenp |
| author_facet | Ang Diing Shenp Lee, Kah Wai. |
| author_sort | Lee, Kah Wai. |
| collection | NTU |
| description | Self-heating effect is an important issue for SOI CMOS. This is because there is a buried oxide layer under the channel region. So, this layer will act as barrier to heat flow as the thermal conductivity of the SiO2 is larger than of Si.Hence, a channel temperature extraction technique by in-situ is presented to characterize the self-heating effects. |
| first_indexed | 2024-10-01T05:29:40Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/45717 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:29:40Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/457172023-07-07T17:27:02Z Studying the self-heating effect in silicon-on-insulator transistors Lee, Kah Wai. Ang Diing Shenp School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Self-heating effect is an important issue for SOI CMOS. This is because there is a buried oxide layer under the channel region. So, this layer will act as barrier to heat flow as the thermal conductivity of the SiO2 is larger than of Si.Hence, a channel temperature extraction technique by in-situ is presented to characterize the self-heating effects. Bachelor of Engineering 2011-06-16T06:57:09Z 2011-06-16T06:57:09Z 2011 2011 Final Year Project (FYP) http://hdl.handle.net/10356/45717 en Nanyang Technological University 53 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Lee, Kah Wai. Studying the self-heating effect in silicon-on-insulator transistors |
| title | Studying the self-heating effect in silicon-on-insulator transistors |
| title_full | Studying the self-heating effect in silicon-on-insulator transistors |
| title_fullStr | Studying the self-heating effect in silicon-on-insulator transistors |
| title_full_unstemmed | Studying the self-heating effect in silicon-on-insulator transistors |
| title_short | Studying the self-heating effect in silicon-on-insulator transistors |
| title_sort | studying the self heating effect in silicon on insulator transistors |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | http://hdl.handle.net/10356/45717 |
| work_keys_str_mv | AT leekahwai studyingtheselfheatingeffectinsilicononinsulatortransistors |