Measurement of stress evolution in pulse-reverse electrochemical deposition using Micro-Raman Spectroscopy
Nowadays, copper deposit is extensively used in microelectronic applications, because the electroplated copper exhibits excellent electrical conductivity along with high hardness. in the resent literature, it is known that copper electroplated with pulse reverse current produces larger hardness than...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2011
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| Online Access: | http://hdl.handle.net/10356/45821 |
| _version_ | 1824456622700756992 |
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| author | Yang, Qi Hua |
| author2 | Miao Jianmin |
| author_facet | Miao Jianmin Yang, Qi Hua |
| author_sort | Yang, Qi Hua |
| collection | NTU |
| description | Nowadays, copper deposit is extensively used in microelectronic applications, because the electroplated copper exhibits excellent electrical conductivity along with high hardness. in the resent literature, it is known that copper electroplated with pulse reverse current produces larger hardness than that by DC (direct current) plating or PC (pulse current)plating.
The residual stress is introduced from the copper electroplating process. It shows an increasing tension stress profile. And the stress in the copper layer is higher than that in the silicon layer. With an additive free electrolyte, the stress increased to around 40 Mpa, while it was about 200 Mpa in copper deposit. Compare with it, the stress became lower if the organic additive for brightening added into the electrolyte. |
| first_indexed | 2025-02-19T03:57:02Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/45821 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:57:02Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/458212023-03-04T19:38:07Z Measurement of stress evolution in pulse-reverse electrochemical deposition using Micro-Raman Spectroscopy Yang, Qi Hua Miao Jianmin School of Mechanical and Aerospace Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Nowadays, copper deposit is extensively used in microelectronic applications, because the electroplated copper exhibits excellent electrical conductivity along with high hardness. in the resent literature, it is known that copper electroplated with pulse reverse current produces larger hardness than that by DC (direct current) plating or PC (pulse current)plating. The residual stress is introduced from the copper electroplating process. It shows an increasing tension stress profile. And the stress in the copper layer is higher than that in the silicon layer. With an additive free electrolyte, the stress increased to around 40 Mpa, while it was about 200 Mpa in copper deposit. Compare with it, the stress became lower if the organic additive for brightening added into the electrolyte. Bachelor of Engineering (Mechanical Engineering) 2011-06-22T03:15:55Z 2011-06-22T03:15:55Z 2011 2011 Final Year Project (FYP) http://hdl.handle.net/10356/45821 en Nanyang Technological University 68 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Yang, Qi Hua Measurement of stress evolution in pulse-reverse electrochemical deposition using Micro-Raman Spectroscopy |
| title | Measurement of stress evolution in pulse-reverse electrochemical deposition using Micro-Raman Spectroscopy |
| title_full | Measurement of stress evolution in pulse-reverse electrochemical deposition using Micro-Raman Spectroscopy |
| title_fullStr | Measurement of stress evolution in pulse-reverse electrochemical deposition using Micro-Raman Spectroscopy |
| title_full_unstemmed | Measurement of stress evolution in pulse-reverse electrochemical deposition using Micro-Raman Spectroscopy |
| title_short | Measurement of stress evolution in pulse-reverse electrochemical deposition using Micro-Raman Spectroscopy |
| title_sort | measurement of stress evolution in pulse reverse electrochemical deposition using micro raman spectroscopy |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | http://hdl.handle.net/10356/45821 |
| work_keys_str_mv | AT yangqihua measurementofstressevolutioninpulsereverseelectrochemicaldepositionusingmicroramanspectroscopy |