Characterization of ultrathin gate dielectric films
This study reports on the effect of Fowler-Nordheim injection stress on the gate oxide above the channel and edge (gate/drain overlap) regions. Several methods for electrical characterization of the gate dielectric are used to study the types of charge trapping at the Si-SiO2 interface, channel and...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/4596 |
| _version_ | 1826111911236730880 |
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| author | Leong, Li Ying. |
| author2 | Chen, Tupei |
| author_facet | Chen, Tupei Leong, Li Ying. |
| author_sort | Leong, Li Ying. |
| collection | NTU |
| description | This study reports on the effect of Fowler-Nordheim injection stress on the gate oxide above the channel and edge (gate/drain overlap) regions. Several methods for electrical characterization of the gate dielectric are used to study the types of charge trapping at the Si-SiO2 interface, channel and edge regions. |
| first_indexed | 2024-10-01T02:58:15Z |
| format | Thesis |
| id | ntu-10356/4596 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T02:58:15Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/45962023-07-04T15:59:01Z Characterization of ultrathin gate dielectric films Leong, Li Ying. Chen, Tupei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials This study reports on the effect of Fowler-Nordheim injection stress on the gate oxide above the channel and edge (gate/drain overlap) regions. Several methods for electrical characterization of the gate dielectric are used to study the types of charge trapping at the Si-SiO2 interface, channel and edge regions. Master of Science (Microelectronics) 2008-09-17T09:55:01Z 2008-09-17T09:55:01Z 2003 2003 Thesis http://hdl.handle.net/10356/4596 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Leong, Li Ying. Characterization of ultrathin gate dielectric films |
| title | Characterization of ultrathin gate dielectric films |
| title_full | Characterization of ultrathin gate dielectric films |
| title_fullStr | Characterization of ultrathin gate dielectric films |
| title_full_unstemmed | Characterization of ultrathin gate dielectric films |
| title_short | Characterization of ultrathin gate dielectric films |
| title_sort | characterization of ultrathin gate dielectric films |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials |
| url | http://hdl.handle.net/10356/4596 |
| work_keys_str_mv | AT leongliying characterizationofultrathingatedielectricfilms |