Copper metallization for deep submicron integrated circuits

Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal...

Fuld beskrivelse

Bibliografiske detaljer
Hovedforfatter: Li, Chao Yong.
Andre forfattere: Zhang, D. H.
Format: Thesis
Udgivet: 2008
Fag:
Online adgang:http://hdl.handle.net/10356/4616