Copper metallization for deep submicron integrated circuits
Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/4616 |
| _version_ | 1826118116367663104 |
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| author | Li, Chao Yong. |
| author2 | Zhang, D. H. |
| author_facet | Zhang, D. H. Li, Chao Yong. |
| author_sort | Li, Chao Yong. |
| collection | NTU |
| description | Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal stability of the Cu/barriers/SiO2/Si structures had been investigated. |
| first_indexed | 2024-10-01T04:38:27Z |
| format | Thesis |
| id | ntu-10356/4616 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T04:38:27Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/46162023-07-04T15:59:05Z Copper metallization for deep submicron integrated circuits Li, Chao Yong. Zhang, D. H. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal stability of the Cu/barriers/SiO2/Si structures had been investigated. Doctor of Philosophy (EEE) 2008-09-17T09:55:22Z 2008-09-17T09:55:22Z 2003 2003 Thesis http://hdl.handle.net/10356/4616 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Li, Chao Yong. Copper metallization for deep submicron integrated circuits |
| title | Copper metallization for deep submicron integrated circuits |
| title_full | Copper metallization for deep submicron integrated circuits |
| title_fullStr | Copper metallization for deep submicron integrated circuits |
| title_full_unstemmed | Copper metallization for deep submicron integrated circuits |
| title_short | Copper metallization for deep submicron integrated circuits |
| title_sort | copper metallization for deep submicron integrated circuits |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials |
| url | http://hdl.handle.net/10356/4616 |
| work_keys_str_mv | AT lichaoyong coppermetallizationfordeepsubmicronintegratedcircuits |