Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology

193 p.

Bibliographic Details
Main Author:	See, Kwang Seng
Other Authors:	Lau Wai Shing
Format:	Thesis
Published:	2011
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	https://hdl.handle.net/10356/46791

Internet

https://hdl.handle.net/10356/46791