Wafer-level isothermal electromigration study on deep sub-micron interconnect metallization
The main focus is to further develop the accelerated wafer-level ISO-J and IOS-T EM tests with the possibility of incorporation into wafer fabrication for rapid EM evaluation of new interconnect metallization.
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Published: |
2008
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/4698 |