Measuring and characterizing sub-micron MOSFETs
In this thesis, a semi-empirical IDS - VDS model for sub-micron Lightly-Doped Drain (LDD) MOSFETs is proposed with an improvement in the strong inversion region. The proposed model is based on the principle of the conventional n-channel enhancement mode MOSFET by taking into consideration the variou...
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| 格式: | Thesis |
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2008
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| 在线阅读: | http://hdl.handle.net/10356/4704 |