TEM characterization of III-V diode structure grown on GeOI structures
A highly sensitive semiconductor device, avalanche photo diode, exploits photoelectric effect to convert light to electricity. APDs which can act like photo detectors provide a built-in first stage gain through avalanche multiplication. When the photo generated carriers acquire enough energy from th...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/10356/47700 |