TEM characterization of III-V diode structure grown on GeOI structures

A highly sensitive semiconductor device, avalanche photo diode, exploits photoelectric effect to convert light to electricity. APDs which can act like photo detectors provide a built-in first stage gain through avalanche multiplication. When the photo generated carriers acquire enough energy from th...

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书目详细资料
主要作者: Myat Kyawt Ei.
其他作者: Ng Beng Koon
格式: Final Year Project (FYP)
语言:English
出版: 2012
主题:
在线阅读:http://hdl.handle.net/10356/47700