TEM characterization of III-V diode structure grown on GeOI structures
A highly sensitive semiconductor device, avalanche photo diode, exploits photoelectric effect to convert light to electricity. APDs which can act like photo detectors provide a built-in first stage gain through avalanche multiplication. When the photo generated carriers acquire enough energy from th...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2012
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/47700 |
| _version_ | 1826112400297820160 |
|---|---|
| author | Myat Kyawt Ei. |
| author2 | Ng Beng Koon |
| author_facet | Ng Beng Koon Myat Kyawt Ei. |
| author_sort | Myat Kyawt Ei. |
| collection | NTU |
| description | A highly sensitive semiconductor device, avalanche photo diode, exploits photoelectric effect to convert light to electricity. APDs which can act like photo detectors provide a built-in first stage gain through avalanche multiplication. When the photo generated carriers acquire enough energy from the electric field to impact ionize, internal current gain can be achieved in avalanche photodiodes. [1]Therefore, by using APD instead of a pin diode or converting the weak optical signal into an electrical current, the internal gain mechanism can improve the signal-to-noise ratio (SNR) of an optical receiver. However, the avalanche process is stochastic in nature and increased sensitivity is limited by the level of excess noise generated by avalanche process. This
report will provide detail of Excess Noise Measurement and it’s setup for APD current. It will mainly focus on how the set up is done and detail explanation of noise measurement set up circuit.
Part of this project will include the step by step preparation of TEM sample. The quality of grown III-V diode structure which grown on Ge on insulator on Si(GeOI) substrates by MOCVD technique is needed to determine the feasibility of monolithic
integration of III-V and Si. Transmission electron microscopy (TEM) is a powerful technique to examine the quality of a sample down to atomic scale. III-IV diode structures grown on GeOI under various growth conditions will be prepared into ultra
thing layer for cross section view and planar view and samples will be examined by high resolution TEM. The investigation will focus at the III-V and Ge interface, where most of the possible defects originated. |
| first_indexed | 2024-10-01T03:06:26Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/47700 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:06:26Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/477002023-07-07T17:11:30Z TEM characterization of III-V diode structure grown on GeOI structures Myat Kyawt Ei. Ng Beng Koon School of Electrical and Electronic Engineering Photonics Research Centre DRNTU::Engineering::Electrical and electronic engineering::Microelectronics A highly sensitive semiconductor device, avalanche photo diode, exploits photoelectric effect to convert light to electricity. APDs which can act like photo detectors provide a built-in first stage gain through avalanche multiplication. When the photo generated carriers acquire enough energy from the electric field to impact ionize, internal current gain can be achieved in avalanche photodiodes. [1]Therefore, by using APD instead of a pin diode or converting the weak optical signal into an electrical current, the internal gain mechanism can improve the signal-to-noise ratio (SNR) of an optical receiver. However, the avalanche process is stochastic in nature and increased sensitivity is limited by the level of excess noise generated by avalanche process. This report will provide detail of Excess Noise Measurement and it’s setup for APD current. It will mainly focus on how the set up is done and detail explanation of noise measurement set up circuit. Part of this project will include the step by step preparation of TEM sample. The quality of grown III-V diode structure which grown on Ge on insulator on Si(GeOI) substrates by MOCVD technique is needed to determine the feasibility of monolithic integration of III-V and Si. Transmission electron microscopy (TEM) is a powerful technique to examine the quality of a sample down to atomic scale. III-IV diode structures grown on GeOI under various growth conditions will be prepared into ultra thing layer for cross section view and planar view and samples will be examined by high resolution TEM. The investigation will focus at the III-V and Ge interface, where most of the possible defects originated. Bachelor of Engineering 2012-01-26T00:58:53Z 2012-01-26T00:58:53Z 2011 2011 Final Year Project (FYP) http://hdl.handle.net/10356/47700 en Nanyang Technological University 51 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Myat Kyawt Ei. TEM characterization of III-V diode structure grown on GeOI structures |
| title | TEM characterization of III-V diode structure grown on GeOI structures |
| title_full | TEM characterization of III-V diode structure grown on GeOI structures |
| title_fullStr | TEM characterization of III-V diode structure grown on GeOI structures |
| title_full_unstemmed | TEM characterization of III-V diode structure grown on GeOI structures |
| title_short | TEM characterization of III-V diode structure grown on GeOI structures |
| title_sort | tem characterization of iii v diode structure grown on geoi structures |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | http://hdl.handle.net/10356/47700 |
| work_keys_str_mv | AT myatkyawtei temcharacterizationofiiivdiodestructuregrownongeoistructures |