Wafer level electromigration reliability study of deep submicron via for multilevel metallization

Wafer level electromigration reliability study of deep submicron via for multilevel metallization

The focus of this study is to compare the electromigration reliability of W-plug and Al-via in deep submicron Al-based multilevel metallization using the Wafer-level EM Test. For comparison, the results of highly accelerated wafer level EM reliability tests on Al-via and W-plug used in Al-based mult...

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Bibliographic Details
Main Author: Loh, Wye Boon.
Other Authors: Tse, Man Siu
Format: Thesis
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:http://hdl.handle.net/10356/4798

Internet

http://hdl.handle.net/10356/4798

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