Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate

Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate

The low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique.

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Hlavní autor: Loke, Wan Khai.
Další autoři: Yoon, Soon Fatt
Médium: Diplomová práce
Vydáno: 2008
Témata:
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
On-line přístup:http://hdl.handle.net/10356/4799

Internet

http://hdl.handle.net/10356/4799

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