Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
The low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique.
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/4799 |
| _version_ | 1826122595084271616 |
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| author | Loke, Wan Khai. |
| author2 | Yoon, Soon Fatt |
| author_facet | Yoon, Soon Fatt Loke, Wan Khai. |
| author_sort | Loke, Wan Khai. |
| collection | NTU |
| description | The low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique. |
| first_indexed | 2024-10-01T05:51:01Z |
| format | Thesis |
| id | ntu-10356/4799 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T05:51:01Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/47992023-07-04T16:00:39Z Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate Loke, Wan Khai. Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials The low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique. Doctor of Philosophy (EEE) 2008-09-17T09:58:58Z 2008-09-17T09:58:58Z 2003 2003 Thesis http://hdl.handle.net/10356/4799 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Loke, Wan Khai. Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate |
| title | Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate |
| title_full | Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate |
| title_fullStr | Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate |
| title_full_unstemmed | Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate |
| title_short | Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate |
| title_sort | molecular beam epitaxial growth of gaas algaas heterostructure and nitrogen containing alloy on patterned substrate |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials |
| url | http://hdl.handle.net/10356/4799 |
| work_keys_str_mv | AT lokewankhai molecularbeamepitaxialgrowthofgaasalgaasheterostructureandnitrogencontainingalloyonpatternedsubstrate |