Study of carbon nanotube field effect transistor using electrostatic force microscopy
As the silicon based metal-oxide-semiconductor field effect transistors quickly reaching the proposed 8 nm limit by 2022, it is necessary to search for solutions that can go beyond the 8 nm limit. One method is to substitute silicon with nanostrucutured materials. Carbon nanotube is a potential...
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| Format: | Thesis |
| Language: | English |
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2012
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| Online Access: | https://hdl.handle.net/10356/48023 |