Electrical and optical characterization of GaInP based heterostructures

Electrical and optical characterization of GaInP based heterostructures

This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic crack...

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Bibliographic Details
Main Author: Lui, Poh Yong.
Other Authors: Yoon, Soon Fatt
Format: Thesis
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:http://hdl.handle.net/10356/4823

Internet

http://hdl.handle.net/10356/4823

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