Electrical and optical characterization of GaInP based heterostructures
This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic crack...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/4823 |
| _version_ | 1811680159995002880 |
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| author | Lui, Poh Yong. |
| author2 | Yoon, Soon Fatt |
| author_facet | Yoon, Soon Fatt Lui, Poh Yong. |
| author_sort | Lui, Poh Yong. |
| collection | NTU |
| description | This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic cracker cell at various growth conditions. A study on defect properties, interface quality, and optical characterizations of the Gao.52Ino.48P/GaAs material system is included. |
| first_indexed | 2024-10-01T03:20:38Z |
| format | Thesis |
| id | ntu-10356/4823 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T03:20:38Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/48232023-07-04T15:57:09Z Electrical and optical characterization of GaInP based heterostructures Lui, Poh Yong. Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic cracker cell at various growth conditions. A study on defect properties, interface quality, and optical characterizations of the Gao.52Ino.48P/GaAs material system is included. Master of Engineering 2008-09-17T09:59:24Z 2008-09-17T09:59:24Z 2000 2000 Thesis http://hdl.handle.net/10356/4823 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Lui, Poh Yong. Electrical and optical characterization of GaInP based heterostructures |
| title | Electrical and optical characterization of GaInP based heterostructures |
| title_full | Electrical and optical characterization of GaInP based heterostructures |
| title_fullStr | Electrical and optical characterization of GaInP based heterostructures |
| title_full_unstemmed | Electrical and optical characterization of GaInP based heterostructures |
| title_short | Electrical and optical characterization of GaInP based heterostructures |
| title_sort | electrical and optical characterization of gainp based heterostructures |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
| url | http://hdl.handle.net/10356/4823 |
| work_keys_str_mv | AT luipohyong electricalandopticalcharacterizationofgainpbasedheterostructures |