Self-aligned dual damascene processing technique to improve copper interconnect performance

Improving the process and reliability of copper via-line metallization using a proposed novel self-aligned dual damascene approach for the 0.13 urn technology generation. Collective process issues when implementing industrial primary DD approaches led to the invention of the DD approach.

Bibliographic Details
Main Author: Neo, Chin Chuan
Other Authors: Goh, Wang Ling
Format: Thesis
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/4931