Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP

Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP

This thesis presents the Electron Cyclotron Resonance (ECR) plasma etching of GaAs and Ga(0.52)In(0.48)P grown using Solid Source Molecular Beam Epitaxy (SSMBE) with a view of applying the process for future heterojunction bipolar transistors (HBTs) fabrication.

Bibliographic Details
Main Author: Ng, Tien Khee.
Other Authors: Yoon, Soon Fatt
Format: Thesis
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:http://hdl.handle.net/10356/4964

Internet

http://hdl.handle.net/10356/4964

Similar Items