Study of degradation mechanisms in SiON gate dielectric film subjected to negative bias temperature instability (NBTI) stress

Study of degradation mechanisms in SiON gate dielectric film subjected to negative bias temperature instability (NBTI) stress

Negative Bias Temperature Instability (NBTI) on thin and thick PMOS with SION oxide is examined using measurement methods with different measurement delays. UFS method with 100ns delay per measurement point which is the fastest NBTI measurement to-date, Slow measurement with 40µs delay per measureme...

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Bibliographic Details
Main Author: Kang, Chun Wei.
Other Authors: Ang Diing Shenp
Format: Final Year Project (FYP)
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:http://hdl.handle.net/10356/49677

Internet

http://hdl.handle.net/10356/49677

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