Thin film characterizations for resistive memory

Thin film characterizations for resistive memory

Resistive memory is currently one of the focused research topics in semiconductor and microelectronics research activities. Resistive memory has advantages of high density, 3-D architecture design, easy to fabrication, low-power use, non-volatile, and high expected performance. In this Final Year Pr...

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Bibliographic Details
Main Author: Weng, Bao Bin.
Other Authors: Zhu Weiguang
Format: Final Year Project (FYP)
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:http://hdl.handle.net/10356/49815

Internet

http://hdl.handle.net/10356/49815

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