Thin film characterizations for resistive memory
Resistive memory is currently one of the focused research topics in semiconductor and microelectronics research activities. Resistive memory has advantages of high density, 3-D architecture design, easy to fabrication, low-power use, non-volatile, and high expected performance. In this Final Year Pr...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/10356/49815 |
| _version_ | 1826109664804208640 |
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| author | Weng, Bao Bin. |
| author2 | Zhu Weiguang |
| author_facet | Zhu Weiguang Weng, Bao Bin. |
| author_sort | Weng, Bao Bin. |
| collection | NTU |
| description | Resistive memory is currently one of the focused research topics in semiconductor and microelectronics research activities. Resistive memory has advantages of high density, 3-D architecture design, easy to fabrication, low-power use, non-volatile, and high expected performance. In this Final Year Project, very thin films with thickness in a range of 1 – 10 nm thick will be grown using the state-of-the-arts laser molecular beam epitaxy (laser-MBE) technology by research staff and graduate students, afterwhich characterize conduction/resistive behavior and other physical and electrical properties of such nano-thin films. The student will closely work with supervisor, research staff and graduate student. |
| first_indexed | 2024-10-01T02:21:38Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/49815 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:21:38Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/498152023-07-07T17:10:52Z Thin film characterizations for resistive memory Weng, Bao Bin. Zhu Weiguang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Resistive memory is currently one of the focused research topics in semiconductor and microelectronics research activities. Resistive memory has advantages of high density, 3-D architecture design, easy to fabrication, low-power use, non-volatile, and high expected performance. In this Final Year Project, very thin films with thickness in a range of 1 – 10 nm thick will be grown using the state-of-the-arts laser molecular beam epitaxy (laser-MBE) technology by research staff and graduate students, afterwhich characterize conduction/resistive behavior and other physical and electrical properties of such nano-thin films. The student will closely work with supervisor, research staff and graduate student. Bachelor of Engineering 2012-05-24T08:19:20Z 2012-05-24T08:19:20Z 2012 2012 Final Year Project (FYP) http://hdl.handle.net/10356/49815 en Nanyang Technological University 48 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Weng, Bao Bin. Thin film characterizations for resistive memory |
| title | Thin film characterizations for resistive memory |
| title_full | Thin film characterizations for resistive memory |
| title_fullStr | Thin film characterizations for resistive memory |
| title_full_unstemmed | Thin film characterizations for resistive memory |
| title_short | Thin film characterizations for resistive memory |
| title_sort | thin film characterizations for resistive memory |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | http://hdl.handle.net/10356/49815 |
| work_keys_str_mv | AT wengbaobin thinfilmcharacterizationsforresistivememory |