Study of degradation mechanism of metal nanocrystal-based gate stacks
This thesis focuses on the degradation and reliability mechanism of the metal nanocrystal-based Al2O3/SiO2 gate stacks which is believed to be a promising candidate for next generation nonvolatile memory. A series of novel approaches were used to obtain in-depth knowledge of the gate stack in terms...
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| Format: | Thesis |
| Language: | English |
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2012
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| Online Access: | https://hdl.handle.net/10356/49981 |