Design of process variation-tolerant circuits

This report emphasises on the 6T Static Random Access Memory (SRAM). It describes the basic theory of the SRAM, the concepts of measuring degradation in digital circuits as well as effects of wordline modulation to mitigate the impact of the combined effect of Negative Bias Temperature Instability (...

Cur síos iomlán

Sonraí bibleagrafaíochta
Príomhchruthaitheoir: Ho, Kim Ming.
Rannpháirtithe: School of Electrical and Electronic Engineering
Formáid: Final Year Project (FYP)
Teanga:English
Foilsithe / Cruthaithe: 2012
Ábhair:
Rochtain ar líne:http://hdl.handle.net/10356/50088