Design of process variation-tolerant circuits

This report emphasises on the 6T Static Random Access Memory (SRAM). It describes the basic theory of the SRAM, the concepts of measuring degradation in digital circuits as well as effects of wordline modulation to mitigate the impact of the combined effect of Negative Bias Temperature Instability (...

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Bibliographic Details
Main Author: Ho, Kim Ming.
Other Authors: School of Electrical and Electronic Engineering
Format: Final Year Project (FYP)
Language:English
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/10356/50088