Intersubband photoluminescence from III-nitride multiple quantum wells

Intersubband photoluminescence from III-nitride multiple quantum wells

This report confirms the achievement of near infrared absorption at 1.865μm wavelength using FTIR (Fourier Transform Infrared Spectroscopy) at room temperature conditions for a GaN/Al(Ga)N multiple quantum well structure. It covers the processes undertaken to prepare each sample, the set up of the F...

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Bibliographic Details
Main Author: Carter, Dale
Other Authors: School of Electrical and Electronic Engineering
Format: Final Year Project (FYP)
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/50145

Internet

http://hdl.handle.net/10356/50145

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