Intersubband photoluminescence from III-nitride multiple quantum wells

Intersubband photoluminescence from III-nitride multiple quantum wells

This report confirms the achievement of near infrared absorption at 1.865μm wavelength using FTIR (Fourier Transform Infrared Spectroscopy) at room temperature conditions for a GaN/Al(Ga)N multiple quantum well structure. It covers the processes undertaken to prepare each sample, the set up of the F...

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Bibliographic Details
Main Author: Carter, Dale
Other Authors: School of Electrical and Electronic Engineering
Format: Final Year Project (FYP)
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/50145
Description
Summary:This report confirms the achievement of near infrared absorption at 1.865μm wavelength using FTIR (Fourier Transform Infrared Spectroscopy) at room temperature conditions for a GaN/Al(Ga)N multiple quantum well structure. It covers the processes undertaken to prepare each sample, the set up of the FTIR system, simulation to obtain each wave function and all measurements related to the structure.

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