Intersubband photoluminescence from III-nitride multiple quantum wells
This report confirms the achievement of near infrared absorption at 1.865μm wavelength using FTIR (Fourier Transform Infrared Spectroscopy) at room temperature conditions for a GaN/Al(Ga)N multiple quantum well structure. It covers the processes undertaken to prepare each sample, the set up of the F...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/10356/50145 |
| _version_ | 1811691062097346560 |
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| author | Carter, Dale |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Carter, Dale |
| author_sort | Carter, Dale |
| collection | NTU |
| description | This report confirms the achievement of near infrared absorption at 1.865μm wavelength using FTIR (Fourier Transform Infrared Spectroscopy) at room temperature conditions for a GaN/Al(Ga)N multiple quantum well structure. It covers the processes undertaken to prepare each sample, the set up of the FTIR system, simulation to obtain each wave function and all measurements related to the structure. |
| first_indexed | 2024-10-01T06:13:55Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/50145 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:13:55Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/501452023-07-07T17:11:01Z Intersubband photoluminescence from III-nitride multiple quantum wells Carter, Dale School of Electrical and Electronic Engineering Wang Qijie DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This report confirms the achievement of near infrared absorption at 1.865μm wavelength using FTIR (Fourier Transform Infrared Spectroscopy) at room temperature conditions for a GaN/Al(Ga)N multiple quantum well structure. It covers the processes undertaken to prepare each sample, the set up of the FTIR system, simulation to obtain each wave function and all measurements related to the structure. Bachelor of Engineering 2012-05-30T04:27:48Z 2012-05-30T04:27:48Z 2012 2012 Final Year Project (FYP) http://hdl.handle.net/10356/50145 en Nanyang Technological University 51 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Carter, Dale Intersubband photoluminescence from III-nitride multiple quantum wells |
| title | Intersubband photoluminescence from III-nitride multiple quantum wells |
| title_full | Intersubband photoluminescence from III-nitride multiple quantum wells |
| title_fullStr | Intersubband photoluminescence from III-nitride multiple quantum wells |
| title_full_unstemmed | Intersubband photoluminescence from III-nitride multiple quantum wells |
| title_short | Intersubband photoluminescence from III-nitride multiple quantum wells |
| title_sort | intersubband photoluminescence from iii nitride multiple quantum wells |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| url | http://hdl.handle.net/10356/50145 |
| work_keys_str_mv | AT carterdale intersubbandphotoluminescencefromiiinitridemultiplequantumwells |