Physical analysis of semiconductors materials and devices
This project concerns the measurements and characterization of GaAs/Si direct wafer bonding and devices using optical and electrical methods. The limitations that lie within GaAs/Si direct wafer bonding will be identified and given improvised solutions. Dry plasma treatment is used before bonding of...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/10356/50264 |
| _version_ | 1826112476392980480 |
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| author | Aung, Myo Sint |
| author2 | Yoon Soon Fatt |
| author_facet | Yoon Soon Fatt Aung, Myo Sint |
| author_sort | Aung, Myo Sint |
| collection | NTU |
| description | This project concerns the measurements and characterization of GaAs/Si direct wafer bonding and devices using optical and electrical methods. The limitations that lie within GaAs/Si direct wafer bonding will be identified and given improvised solutions. Dry plasma treatment is used before bonding of the two substrates. The effects of plasma parameters (i.e. RF power, chamber pressure, gas flow rate and type of gas used) on activated surface will be analyzed and modeled using theoretical methods and compared to the measurement data using analytical models. We will not only focus on the high bond energy (surface energy) but also the bonding density, the amount of available atomic sites to be bonded at the interface due to void occurrence. The best result comes so far from the experiments are the RF Power of 100 Watts, chamber pressure of 100 mtorr and plasma exposure of 5 seconds while using argon gas. From this research, it could have impact on current semiconductor technology’s bonding process and overall integration process. |
| first_indexed | 2024-10-01T03:07:38Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/50264 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:07:38Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/502642023-07-07T16:40:16Z Physical analysis of semiconductors materials and devices Aung, Myo Sint Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This project concerns the measurements and characterization of GaAs/Si direct wafer bonding and devices using optical and electrical methods. The limitations that lie within GaAs/Si direct wafer bonding will be identified and given improvised solutions. Dry plasma treatment is used before bonding of the two substrates. The effects of plasma parameters (i.e. RF power, chamber pressure, gas flow rate and type of gas used) on activated surface will be analyzed and modeled using theoretical methods and compared to the measurement data using analytical models. We will not only focus on the high bond energy (surface energy) but also the bonding density, the amount of available atomic sites to be bonded at the interface due to void occurrence. The best result comes so far from the experiments are the RF Power of 100 Watts, chamber pressure of 100 mtorr and plasma exposure of 5 seconds while using argon gas. From this research, it could have impact on current semiconductor technology’s bonding process and overall integration process. Bachelor of Engineering 2012-05-31T04:24:26Z 2012-05-31T04:24:26Z 2012 2012 Final Year Project (FYP) http://hdl.handle.net/10356/50264 en Nanyang Technological University 40 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Aung, Myo Sint Physical analysis of semiconductors materials and devices |
| title | Physical analysis of semiconductors materials and devices |
| title_full | Physical analysis of semiconductors materials and devices |
| title_fullStr | Physical analysis of semiconductors materials and devices |
| title_full_unstemmed | Physical analysis of semiconductors materials and devices |
| title_short | Physical analysis of semiconductors materials and devices |
| title_sort | physical analysis of semiconductors materials and devices |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| url | http://hdl.handle.net/10356/50264 |
| work_keys_str_mv | AT aungmyosint physicalanalysisofsemiconductorsmaterialsanddevices |