Effect of stress migration on electromigration for nano scale advanced interconnects
The interconnect system is a significant part of the integrated circuit because of its function to connect millions of transistors, and routing signals into and out of the chip. Therefore, investigating its reliability is a priority for the industry to ensure that the chip lifetime will meet the req...
Main Author: | Anson Heryanto |
---|---|
Other Authors: | Pey Kin Leong |
Format: | Thesis |
Language: | English |
Published: |
2012
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/50271 |
Similar Items
-
Three-dimensional (3D) finite element modeling of stress distribution and migration in Cu interconnects
by: Anson Heryanto
Published: (2010) -
Electromigration reliability of copper interconnect in submicron microelectronics application
by: Ang, Kian Ann
Published: (2008) -
Wafer-level isothermal electromigration study on deep sub-micron interconnect metallization
by: Lim, Yeow Kheng.
Published: (2008) -
Investigating the electromigration reliability of copper interconnects
by: Shao, Wei
Published: (2010) -
Study of electromigration-induced voiding mechanisms in Cu interconnects
by: Anand Vishwanath Vairagar
Published: (2010)