Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors
Stress engineering is widely used in the microelectronics industry to improve the on-current (Ion) performance of the metal-oxide-semiconductor (MOS) transistors through the strain-induced mobility enhancement. However, there are still debates regarding the relevance of the low-field mobility in the...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
2012
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/50306 |