Investigation of different NBTI simulation models

Negative Bias Temperature Instability (NBTI) is an important reliability concern since integrated circuit technology has entered the ultra-scaled CMOS technology node. This phenomenon arises from traps generation at the dielectric-substrate interface under the presence of electric field and high tem...

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Bibliographic Details
Main Author: Low, Elaine Xiao Mei.
Other Authors: Ang Diing Shenp
Format: Final Year Project (FYP)
Language:English
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/10356/50346