Study of VIA etching for sub-micron device fabrication
Via represents the weakest link in multilevel metallisation for IC devices and oxide etching is inherent in the via opening step. Because of higher bond energies, oxide etching typically uses aggressive ion-enhanced, fluorocarbon-based plasma systems. It relies on the competing influences of polymer...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/5055 |