Nanoscale characterization of metal/dielectric/semiconductor interfaces using ballistic electron emission microscopy
Ballistic electron emission microscopy (BEEM) was employed to study metal/dielectric/semiconductor devices with high spatial resolution. A comprehensive study of the subthreshold characteristics of the BEEM spectra shows that the BEEM current in the subthreshold region decreases at a rate of ~60 mV/...
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Format: | Thesis |
Language: | English |
Published: |
2012
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Online Access: | https://hdl.handle.net/10356/50608 |