Gate-all-around nanowire FET sensors with ultrahigh sensitivity and low noise
In this research work, new kinds of field-effect transistor (FET)-based sensing elements were developed to maximize the detection limits of conventional piezoresistors. These sensing elements were able to enhance the piezoresistive sensitivity and reduce the intrinsic noise, which significantly impr...
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| Format: | Thesis |
| Language: | English |
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2012
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| Online Access: | https://hdl.handle.net/10356/50676 |