Development of passive components for high power application
In the recent years, significant developments on III-V nitride based devices have shown remarkable results. Gallium Nitride based heterostructure transistors such as GaN High Electron Mobility Transistor (HEMT) is attractive for high power and high frequency applications because of their high breakd...
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| Format: | Thesis |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/10356/50939 |