Analysis and characterization of ultra thin SOI MOSFET by MEDICI

Analysis and characterization of ultra thin SOI MOSFET by MEDICI

In this work, the charge coupling, breakdown mechanism and self-heating effect were investigated and identified by two-dimensional and two-carrier device simulation. This work provided comprehensive understanding of unique features of ultrathin SOI MOSFETs and contributed to SOI device modeling and...

Full description

Bibliographic Details
Main Author: Shin, Chang Yeop.
Other Authors: School of Materials Science & Engineering
Format: Thesis
Language:English
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/5106

Internet

http://hdl.handle.net/10356/5106

Similar Items