Analysis and characterization of ultra thin SOI MOSFET by MEDICI
In this work, the charge coupling, breakdown mechanism and self-heating effect were investigated and identified by two-dimensional and two-carrier device simulation. This work provided comprehensive understanding of unique features of ultrathin SOI MOSFETs and contributed to SOI device modeling and...
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| Format: | Thesis |
| Language: | English |
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2008
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| Online Access: | http://hdl.handle.net/10356/5106 |
| _version_ | 1811687354204684288 |
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| author | Shin, Chang Yeop. |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Shin, Chang Yeop. |
| author_sort | Shin, Chang Yeop. |
| collection | NTU |
| description | In this work, the charge coupling, breakdown mechanism and self-heating effect were investigated and identified by two-dimensional and two-carrier device simulation. This work provided comprehensive understanding of unique features of ultrathin SOI MOSFETs and contributed to SOI device modeling and design for future high performance, low power/voltage ICs. |
| first_indexed | 2024-10-01T05:14:59Z |
| format | Thesis |
| id | ntu-10356/5106 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:14:59Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/51062023-03-04T16:31:40Z Analysis and characterization of ultra thin SOI MOSFET by MEDICI Shin, Chang Yeop. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films In this work, the charge coupling, breakdown mechanism and self-heating effect were investigated and identified by two-dimensional and two-carrier device simulation. This work provided comprehensive understanding of unique features of ultrathin SOI MOSFETs and contributed to SOI device modeling and design for future high performance, low power/voltage ICs. Master of Engineering (MSE) 2008-09-17T10:20:07Z 2008-09-17T10:20:07Z 2002 2002 Thesis http://hdl.handle.net/10356/5106 en Nanyang Technological University 129 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Shin, Chang Yeop. Analysis and characterization of ultra thin SOI MOSFET by MEDICI |
| title | Analysis and characterization of ultra thin SOI MOSFET by MEDICI |
| title_full | Analysis and characterization of ultra thin SOI MOSFET by MEDICI |
| title_fullStr | Analysis and characterization of ultra thin SOI MOSFET by MEDICI |
| title_full_unstemmed | Analysis and characterization of ultra thin SOI MOSFET by MEDICI |
| title_short | Analysis and characterization of ultra thin SOI MOSFET by MEDICI |
| title_sort | analysis and characterization of ultra thin soi mosfet by medici |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | http://hdl.handle.net/10356/5106 |
| work_keys_str_mv | AT shinchangyeop analysisandcharacterizationofultrathinsoimosfetbymedici |