Atomistic simulation of epitaxial Si film growth on Si (001) surface

Atomistic simulation of epitaxial Si film growth on Si (001) surface

The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface.

Bibliographic Details
Main Author: Xie, Xuepeng.
Other Authors: School of Materials Science & Engineering
Format: Thesis
Language:English
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/5130

Internet

http://hdl.handle.net/10356/5130

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