Atomistic simulation of epitaxial Si film growth on Si (001) surface
The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface.
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| Format: | Thesis |
| Language: | English |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/5130 |
| _version_ | 1826118275901161472 |
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| author | Xie, Xuepeng. |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Xie, Xuepeng. |
| author_sort | Xie, Xuepeng. |
| collection | NTU |
| description | The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface. |
| first_indexed | 2024-10-01T04:40:44Z |
| format | Thesis |
| id | ntu-10356/5130 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:40:44Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/51302023-03-04T16:32:05Z Atomistic simulation of epitaxial Si film growth on Si (001) surface Xie, Xuepeng. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface. Master of Engineering (MSE) 2008-09-17T10:20:46Z 2008-09-17T10:20:46Z 2001 2001 Thesis http://hdl.handle.net/10356/5130 en Nanyang Technological University 102 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Xie, Xuepeng. Atomistic simulation of epitaxial Si film growth on Si (001) surface |
| title | Atomistic simulation of epitaxial Si film growth on Si (001) surface |
| title_full | Atomistic simulation of epitaxial Si film growth on Si (001) surface |
| title_fullStr | Atomistic simulation of epitaxial Si film growth on Si (001) surface |
| title_full_unstemmed | Atomistic simulation of epitaxial Si film growth on Si (001) surface |
| title_short | Atomistic simulation of epitaxial Si film growth on Si (001) surface |
| title_sort | atomistic simulation of epitaxial si film growth on si 001 surface |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | http://hdl.handle.net/10356/5130 |
| work_keys_str_mv | AT xiexuepeng atomisticsimulationofepitaxialsifilmgrowthonsi001surface |