Growth and characterization of germanium expitaxial film on silicon (001) using reduced pressure chemical vapor deposition (RP-CVD)
As the present Si Technology is reaching its physical and technological limits, the trend for the future would unlikely is based solely on Moore’s Law as the transistor geometrical scaling is coming to an end. As the Si substrate would still be the preferred by the semiconductor industries due to i...
| প্রধান লেখক: | |
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| অন্যান্য লেখক: | |
| বিন্যাস: | গবেষণাপত্র |
| ভাষা: | English |
| প্রকাশিত: |
2013
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | http://hdl.handle.net/10356/52548 |