Schottky barrier engineering on dopant-segregated schottky silicon nanowire MOSFETs
Silicon nanowire with Gate-All-Around architecture is considered as one of the most promising candidates for CMOS scaling beyond 11 nm technology node due to its superior gate to channel electrostatic control. However, due to the one dimensional nature of nanowire, the resistance at the nanowire sou...
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| Format: | Thesis |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/53206 |