Design and fabrication of ultraviolet metal-oxide light-emitting devices
Zinc Oxide (ZnO) has a wide bandgap energy (~3.37 eV) and high exciton binding enegy (~ 60 meV) which is more than two times larger than that of Gallium Nitride (GaN). Therefore, ZnO has been recognized as a promising candidate of ultraviolet (UV) optoelectronic devices operating at room temperature...
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| Formato: | Tese |
| Idioma: | English |
| Publicado em: |
2013
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| Acesso em linha: | https://hdl.handle.net/10356/53756 |