Finite element analysis of temperature dependence of the piezoresistance of silicon
There is a widespread demand for high-temperature pressure sensors at temperatures above 200 °C and with high-frequency responses. PZT based devices owing to its excellent electrical and mechanical properties at rash environments, is a great candidate for use as an electromechanical sensor for high-...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2013
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| Online Access: | http://hdl.handle.net/10356/54158 |