Study of low temperature plasma activated wafer bonding
A 2-inch GaAs and Si were bonded via Argon (Ar) plasma activation. The effects brought by plasma parameters of exposure time, pressure and radio-frequency (RF) power were investigated through statistical means and characterization tools such as Atomic Force Microscopy (AFM) and Video Contact Angle S...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/54210 |