Characterization of GaN-based HEMT structures for high power applications
GaN based HEMT devices on 4 inch Si (111) were characterized to study their electrical parameters, using Hall Effect, Current-Voltage and Capacitance-Voltage measurements. Four different types of structure configurations were studied, which include different stress mitigating layers with carbon dopi...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2013
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| Online Access: | http://hdl.handle.net/10356/54247 |