CMOS friendly electrode material screening for HfOx-based RRAM
This project is aim to study the Resistive Radom-Access Memory (RRAM), which is expected to be the replacement of flash memory and a next generation memory. RRAM device has the advantages of high scalability, simple structure, low power consumption and fast speed. This emerging memory technology att...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2013
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| Online Access: | http://hdl.handle.net/10356/54499 |