Digital breakdown and switching behaviours in high-K dielectrics in nano-scale mosfets

It has been reported that the breakdown (BD) mode in ultra-thin gate dielectrics exhibits progressive BD after soft BD (SBD) instead of abrupt hard BD (HBD) commonly observed in thick dielectrics. Furthermore, the first SBD event in ultra-thin dielectrics does not necessarily lead to complete device...

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Bibliographic Details
Main Author: Liu, Wenhu.
Other Authors: Tan Chuan Seng
Format: Thesis
Language:English
Published: 2013
Subjects:
Online Access:http://hdl.handle.net/10356/54598