Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications
This thesis introduces fabrication and physical as well as electrical characterizations of oxide-based resistive random access memory (RRAM) which has been recently explored as one of the most promising nonvolatile memory technology. The objective of this thesis focus on the device fabrication and i...
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| Formato: | Tese |
| Idioma: | English |
| Publicado em: |
2013
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| Acesso em linha: | https://hdl.handle.net/10356/54664 |
| _version_ | 1826121431821320192 |
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| author | Fang, Zheng |
| author2 | Yu Hongyu |
| author_facet | Yu Hongyu Fang, Zheng |
| author_sort | Fang, Zheng |
| collection | NTU |
| description | This thesis introduces fabrication and physical as well as electrical characterizations of oxide-based resistive random access memory (RRAM) which has been recently explored as one of the most promising nonvolatile memory technology. The objective of this thesis focus on the device fabrication and investigation of underlying physics of resistive switching mechanism and current conduction mechanism indifferent resistance states in oxide-based RRAM, in order to improve device performance for the implementation and integration of memory cell into CMOS circuits. |
| first_indexed | 2024-10-01T05:32:11Z |
| format | Thesis |
| id | ntu-10356/54664 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:32:11Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/546642023-07-04T16:17:36Z Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications Fang, Zheng Yu Hongyu Fan Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics This thesis introduces fabrication and physical as well as electrical characterizations of oxide-based resistive random access memory (RRAM) which has been recently explored as one of the most promising nonvolatile memory technology. The objective of this thesis focus on the device fabrication and investigation of underlying physics of resistive switching mechanism and current conduction mechanism indifferent resistance states in oxide-based RRAM, in order to improve device performance for the implementation and integration of memory cell into CMOS circuits. DOCTOR OF PHILOSOPHY (EEE) 2013-07-15T07:31:04Z 2013-07-15T07:31:04Z 2013 2013 Thesis Fang, Z. (2013). Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/54664 10.32657/10356/54664 en 188 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Fang, Zheng Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications |
| title | Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications |
| title_full | Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications |
| title_fullStr | Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications |
| title_full_unstemmed | Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications |
| title_short | Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications |
| title_sort | investigation of resistive switching and conduction mechanisms in oxide based rram device for emerging nonvolatile memory applications |
| topic | DRNTU::Engineering::Electrical and electronic engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | https://hdl.handle.net/10356/54664 |
| work_keys_str_mv | AT fangzheng investigationofresistiveswitchingandconductionmechanismsinoxidebasedrramdeviceforemergingnonvolatilememoryapplications |